BSC060P03NS3EG 17.7 A, 30 V, 0.006 ohm, P-CHANNEL, Si, POWER, MOSFET
From Infineon Technologies AG
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 149 mJ |
| Case Connection | DRAIN |
| Channel Type | P-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 17.7 A |
| Drain-source On Resistance-Max | 0.0060 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | GREEN, PLASTIC, TDSON-8 |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Pulsed Drain Current-Max (IDM) | 200 A |
| Surface Mount | Yes |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
