IRF640N MOSFET N-CH 200V 18A TO-220AB
From International Rectifier
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Datasheets | IRF640N |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1160pF @ 25V |
| Mounting Type | Through Hole |
| Other Names | *IRF640N |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power - Max | 150W |
| Product Photos | TO-220AB PKG |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
| Series | HEXFET® |
| Standard Package | 50 |
| Supplier Device Package | TO-220AB |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
