IRF640NSTRR 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From International Rectifier
Status | EOL/LIFEBUY |
Avalanche Energy Rating (Eas) | 247 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 18 A |
Drain-source On Resistance-Max | 0.1500 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | PLASTIC, D2PAK-3 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 72 A |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |