IXTA80N12T2
80 A, 120 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET

From Zilog

StatusACTIVE
Avalanche Energy Rating (Eas)400 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min120 V
Drain Current-Max (ID)80 A
Drain-source On Resistance-Max0.0170 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionPLASTIC, TO-263AA, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)200 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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