Did you mean: SIHB16N50C-E3
Product Datasheet Search Results:
10 Pages, 299 KB, Original- SIHB16N50C-E3
- Vishay Semiconductors
- MOSFET N-Channel 500V
8 Pages, 151 KB, Original- SIHB16N50CTL-E3
- Vishay Presicion Group
- 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
8 Pages, 151 KB, Original- SIHB16N50CTR-E3
- Vishay Presicion Group
- 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Vishay.com/SIHB16N50C-E3
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D\u00b2PAK (TO-263)","Datasheets":"SIH(P,B,F)16N50C","Rds On (Max) @ Id, Vgs":"380 mOhm @ 8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"250W","Standard Package":"1,000","PCN Assembly/Origin":"S...
1663 Bytes - 00:22:00, 17 March 2025
Vishay.com/SIHB16N50CTL-E3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-263, D2PAK-3","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Avalanche Energy Rating (Eas)":"320 mJ","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"16 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENE...
1481 Bytes - 00:22:00, 17 March 2025
Vishay.com/SIHB16N50CTR-E3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-263, D2PAK-3","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Avalanche Energy Rating (Eas)":"320 mJ","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"16 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENE...
1482 Bytes - 00:22:00, 17 March 2025
