Product Datasheet Search Results:
9 Pages, 466 KB, Original- BSZ100N06LS3G
- Infineon Technologies Ag
- 11 A, 60 V, 0.0179 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 467 KB, Original- BSZ100N06LS3GATMA1
- Infineon Technologies
- MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
Product Details Search Results:
Infineon.com/BSZ100N06LS3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"55 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0179 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","China RoHS Comp...
1613 Bytes - 09:36:16, 19 March 2025
Infineon.com/BSZ100N06LS3GATMA1
{"Product Category":"MOSFET","Series":"BSZ100N06","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1200 Bytes - 09:36:16, 19 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSZ100N06LS3G.pdf | 0.45 | 1 | Request |
