2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description * * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability TO-92 1 1. Source 2. Gate 3. Drain Ordering Information Part Number Marking Package Packing Method 2N7000BU 2N7000 TO-92 3L Bulk 2N7000TA 2N7000 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage t
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description * * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability TO-92 1 1. Source 2. Gate 3. Drain Ordering Information Part Number Marking Package Packing Method 2N7000BU 2N7000 TO-92 3L Bulk 2N7000TA 2N7000 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage t
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description * * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability TO-92 1 1. Source 2. Gate 3. Drain Ordering Information Part Number Marking Package Packing Method 2N7000BU 2N7000 TO-92 3L Bulk 2N7000TA 2N7000 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage t
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description * * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability TO-92 1 1. Source 2. Gate 3. Drain Ordering Information Part Number Marking Package Packing Method 2N7000BU 2N7000 TO-92 3L Bulk 2N7000TA 2N7000 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage t
2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol VDSS ID Value Units Drain-to-Source Voltage Characteristic 60 V Continuous Drain Current (TC=25) 200 Continuous Drain Current (TC=100) 110 IDM Drain Current-Pulsed VGS PD TJ , TSTG TL mA 1000 mA Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25) 400 mW Linear Derating Factor 3.2 mW/ Operating Junction and - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 312.5 /W Rev. B N-CHANNEL Small Signal MOSFET 2N7000BU/2N7000TA Electrical Characteristics (TC=25 unless otherwise specified) Min. Typ. Max. Units Symbol Characteristic BVDSS Drain-Source Breakdown Vol
2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol VDSS ID Value Units Drain-to-Source Voltage Characteristic 60 V Continuous Drain Current (TC=25) 200 Continuous Drain Current (TC=100) 110 IDM Drain Current-Pulsed VGS PD TJ , TSTG TL mA 1000 mA Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25) 400 mW Linear Derating Factor 3.2 mW/ Operating Junction and - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 312.5 /W Rev. A N-CHANNEL Small Signal MOSFET 2N7000BU/2N7000TA Electrical Characteristics (TC=25 unless otherwise specified) Min. Typ. Max. Units Symbol Characteristic BVDSS Drain-Source Breakdown Vol
2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol VDSS ID Value Units Drain-to-Source Voltage Characteristic 60 V Continuous Drain Current (TC=25) 200 Continuous Drain Current (TC=100) 110 IDM Drain Current-Pulsed VGS PD TJ , TSTG TL mA 1000 mA Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25) 400 mW Linear Derating Factor 3.2 mW/ Operating Junction and - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 312.5 /W Rev. A N-CHANNEL Small Signal MOSFET 2N7000BU/2N7000TA Electrical Characteristics (TC=25 unless otherwise specified) Min. Typ. Max. Units Symbol Characteristic BVDSS Drain-Source Breakdown Vol
S138K 512-BSS138 512-BSS138D87Z 512-RFD14N05LSM 512-RFD14N05L 512-RFD14N05LSM9A 512-RFD16N05LSM9A 512-HUF75321P3 512-HUF75345G3 512-HUF75345P3 512-FDH5500-F085 512-HUF75344G3 512-HUF75339P3 512-2N7002K 512-2N7002D87Z 512-2N7002L 512-2N7002W 512-2N7002 512-2N7000BU 512-2N7000TA * 512-2N7000 * 512-2N7000D26Z * 512-2N7000D74Z 512-2N7000D75Z * 512-NDS7002A 512-BS270 512-BS270D74Z * 512-BS170 * 512-BS170D26Z * 512-BS170D27Z * 512-BS170D75Z 512-BS170_D74Z * 512-MMBF170 512-FDN5630 512-FDN5630_F095 512-NDT014 512-FQT13N06LTF 512-FQT13N06TF 512-NDT3055L 512-NDT3055 512-FDC5612 512-FDS5351 512-FDMA86551L 512-FDS5680 512-FDS5670 512-FQPF13N06L 512-RFD3055LE 512-FQD13N06LTM 512-FQU13N06LTU 512-FDS5672 512-HUF76407D3ST 512-MTP3055VL 512-MTD3055VL 512-FDMC86520L 512-FQP13N06L 512-FDMS86520 512-FQPF20N06 512-FQPF20N06L 512-RFD16N06LESM9A 512-FQPF27P06 512-RFD12N06RLESM9A 512-FDMS5362L_F085 512-FDMS86540 512-FQP20N06 512-FQP20N06L 512-FDMS86520L 512-FDMS5672 512-FQPF30N06L 512-FDD5690 512-FQP30N06 512-FDMS86550
.......................2-93 2N6428A .......................2-107 2N6517..........................2-108 2N6518..........................2-111 2N6519..........................2-111 2N6520..........................2-111 2N7000............................2-20 2N7000BU.......................2-20 2N7000TA .......................2-20 2N7002..............................2-6 2N7002MTF ......................2-6 2N7051............................2-93 2N7052............................2-93 2N7053............................2-92 2W005G ........................2-143 2W01G ..........................2-143 2W02G ..........................2-143 2W04G ..........................2-143 2W06G ..........................2-143 2W08G ..........................2-143 2W10G ..........................2-143 3N246............................2-142 3N247............................2-142 3N248............................2-142 3N249............................2-142 3N250............................2-142 3N251........................
- 0.08 0.11 - 7.2 3.5 1.6 FDC636P -20 Single - 0.13 0.18 - 6 2.8 1.6 FDC6318P -12 Dual - 0.09 0.125 0.2 5.4 2.5 0.96 FDC606P -12 Single - 0.026 0.035 0.053 18 6 1.6 www.fairchildsemi.com Replaced by FDC6306P Discrete TO-92 BVDSS Min. (V) Config. BS270 60 2N7000BU RDS(ON) Max () @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single 2 - - - - 0.4 0.63 60 Single 5 - - - - 0.2 0.4 2N7000TA 60 Single 5 - - - - 0.2 0.4 BS170 60 Single 5 - - - - 0.5 0.83 SSN1N45B 450 Single 4.25 - - - 6.5 0.5 0.9 Part Number ID (A) PD (W) TO-92 N-Channel www.fairchildsemi.com Discrete TO-92L BVDSS Min. (V) Config. IRFNL210B 200 FQNL2N50B FQNL1N50B Part Number RDS(ON) Max () @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single 1.5 - - - 7.2 1 3.1 500 Single 5.3 - - - 6 0.35 1.5 500 Single 9 - - - 4 0.27 1.5 ID (A) PD (W) TO-92L N-Channel www.fairchildsemi.com Discrete SuperSOT-8 Part Number BVDSS Min. (V) RDS(ON) Max () @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Config. ID (A) PD (W) SuperSOT-8 N-Channel F
2N7000BU 60 Single 5 - - - - 0.2 0.4 2N7000TA 60 Single 5 - - - - 0.2 0.4 BS170 60 Single 5 - - - - 0.5 0.83 2N7000 60 Single 5 5.3 - - - 0.2 0.4 FQNL2N50B 500 Single 5.3 - - - 6 0.35 1.5 FQNL1N50B 500 Single 9 - - - 4 0.27 1.5 Note: Unless otherwise specified, QG is given @ 5VGS for MOSFETs with ratings of 30VDS and below. QG is given @ 10VGS for MOSFETs with ratings higher than 30VDS. www.fairchildsemi.com
-25 FDG6304P -25 FDG6302P -25 FDG326P -20 FDG318P -20 FDG328P -20 FDG312P -20 FDG6308P -20 FDG6306P -20 FDG330P -12 FDG6316P -12 SC70-6 Complementary N- and P-Channel FDG6321C 25 -25 FDG6322C 25 -25 FDG6322C 25 -25 FDG6322C 20 -20 TO-92 N-Channel BS270 60 2N7000BU/TA 60 BS170 60 2N7000 60 FQNL2N50B 500 FQNL1N50B 500 2 1.8V @ VGS = 5V Maximum Rating (Note pg. 1) ID (A) 10V 4.5V 2.5V PD (W) Dual - 0.018 0.03 - 9.6 9 2.1 Single - 0.018 0.03 - 9.6 9 2 Single - 0.018 0.03 - 9.6 7.5 1.6 Single - 0.0065 0.0075 - 31 13.5 2.2 Single 0.0035 0.005 - - 50 22 3.3 Single Single 0.015 - 0.0165 0.0095 0.0145 - 25 43 12.5 13 2.2 2.6 Dual - 0.045 0.075 - 9 5.5 2.1 Single Single Single Single Single Dual Dual Single Dual 0.12 0.5 0.09 0.09 0.115 0.3 0.45 0.45 4 0.16 - 0.115 0.1 0.15 0.4 .6@2.7V .6@2.7V 5@2.7V - 0.14 - 3.3 4.5 3 1.1 1.64 1.64 0.29 2.1 3.7 1.5 1.5 1.9 0.7 0.95 0.5 0.22 2 0.6 0.42 0.42 0.75 0.3 0.75 0.3 0.3 0.75 0.42 Single Single Dual Dual Single Single Single Single Dual Dual Single Dual 0.19 - 0.3
FDP2552 FDP2570 FDP2572 APEC AP80N03S AP85L02H AP85L02J AP85L02P AP85L02S AP90N03P AP90N03S AP9926M STB85NF3LLT4 STD90NH02LT4 STD95NH02L-1 STP90NF03L STB100NH02LT4 STP80NF03L STB80NF03L-04T4 STS6NF20V STW29NK50ZD STW20NM50FD AUK STK630F IRF630FP Fairchild 2N7000BU/TA 2N7002 BS170 BS270 BUZ11 BUZ71 BUZ71A BUZ72A FCP11N60 FCPF11N60 FDB045AN08A0 FDB10AN06A0 FDB13AN06A0 FDB14AN06LA0 FDB2552 FDB2570 FDB2572 FDB3632 FDB3652 FDB3672 FDB3682 FDB4030L FDB42AN15A0 FDB5645 FDB5680 FDB5690 FDB6030BL FDB6030L FDB6035AL FDB6035L FDB603AL FDB6644 FDB6670AL FDB6676 FDB7030BL FDB7030L FDB7042L FDB7045L FDB8030L FDB8870 FDB8874 FDB8896 FDC634P FDC636P FDC638P FDC640P FDC642P 4 2N7000 2N7000 STP36NF06 STP16NF06 STP16NF06 STP16NK60Z STB60NF06LT4 STB60NF06LT4 STB40NS15T4 STB120NF10T4 STB80NF10T4 STB40NF10T4 STB35NF10T4 STB55NF06T4 STB45NF06T4 STB45NF3LLT4 STB45NF3LLT4 STB70NH03LT4 STB45NF3LLT4 ST nearest Fairchild APT APT5017BVFR Direct 2N7002 2N7000 STP20NF06L STP14NF12 STP20NM60 STP11NM60FP STB140NF75T4 STB60NF06LT
5 512-FQPF20N06L TO-220F 60 55 9.5 15.7 30 .78 512-FQPF30N06L TO-220F 60 35 15 22.5 38 .91 512-FQPF50N06 TO-220F 60 22 31 31 47 .96 512-FQB30N06LTM TO-26360 35 15 32 79 .86 512-FQA85N06 TO-3P 60 10 86 100214 2.95 512-2N7000 TO-92 6050001.7 0.2 0.4 .16 512-2N7000BU TO-92 605000 - .2 400 .09 512-BS170 TO-92 605000 - 0.50.83 .16 512-BS270 TO-92 602000 - 0.40.63 .13 512-2N7000D75Z TO-92 6050001.7 0.2 3.2 .09 512-2N7000D26Z TO-92 6050001.7 0.2 0.4 .08 512-BS170_D74Z TO-92 605000 1.7 0.50.83 .18 D2-Pak75 47 11 14 41 .67 512-FDB3502 Power-5675 14.5 34 49 96 1.33 512-FDMS3500 512-FDP032N08 TO-220 75 3.2 169235375 2.20 512-FDP047N08 TO-220 75 4.7 117164268 1.66 .86 512-FDD16AN08A0 TO-252 75 16 31 50135 TO-263 75 3.1 169235375 2.24 512-FDB031N08 512-FDP16AN08A0 TO-220 75 16 28 58135 1.14 512-FDP060AN08A0 TO-220 75 6 99 80255 1.78 512-FDP047AN08A0 TO-220 75 4 92 80310 1.76 512-FDH038AN08A1 TO-247 75 3 12580450 7.47 512-FDB045AN08A0 TO-263 75 4 92 90310 1.80 Power 56 80 16 28 8.8 78 1.04 512-FDMS3572 SO-8 80
50 0.02 - 43 FDS6375 FDS8433A -20 -20 Single Single - - 0.024 0.047 0.032 0.07 - - 23 20 8 5 2.5 2.5 FDS9431A -20 Single - 0.13 0.18 - 6 3.5 2.5 DISCRETE POWER www.fairchildsemi.com 2-19 Discrete Power Products - MOSFETs TO-92 BVDSS Min. (V) Config. BS270 2N7000BU 2N7000TA BS170 60 60 60 60 SSN1N45B 450 Part Number RDS(ON) Max () @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V ID (A) PD (W) Single Single Single Single 2 5 5 5 - - - - - - - - - - - - - - - - 0.4 0.2 0.2 0.5 0.63 0.4 0.4 0.83 Single 4.25 - - - 6.5 0.5 0.9 TO-92 N-Channel www.fairchildsemi.com 2-20 Discrete Power Products - MOSFETs SOT-223 BVDSS Min. (V) Config. SOT-223 N-Channel NDT453N FDT439N 30 30 NDT451AN FDT459N RDS(ON) Max () @ VGS = 4.5V 2.5V 1.8V Single Single 0.028 - 0.042 0.045 - 0.058 - - 28 10.7 8 6.3 3 3 30 30 Single Single 0.035 0.035 0.05 0.055 - - - - 19 12 7.2 6.5 3 3 FDT457N HUF75309T3ST 30 55 Single Single 0.06 0.07 0.09 - - - - - 4.2 10.7 5 3 3 1.1 HUFA75309T3ST HUF75307T3ST NDT3055 FQT13N06L FQT13N06 FDT3612