Product Datasheet Search Results:

GLT4160N04-100J3.pdf21 Pages, 323 KB, Original
GLT4160N04-100J3
G-link Technology
4M x 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
GLT4160N04-100TC.pdf21 Pages, 323 KB, Original
GLT4160N04-100TC
G-link Technology
4M x 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
SQD40N04-10A.pdf7 Pages, 101 KB, Original
SQD40N04-10A
Vishay Presicion Group
42 A, 40 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
SQD40N04-10A-GE3.pdf9 Pages, 132 KB, Original
SQD40N04-10A-GE3
Vishay [siliconix]
MOSFET N-CH D-S 40V 42A TO252 - SQD40N04-10A-GE3
SUB70N04-10.pdf4 Pages, 43 KB, Original
SUB70N04-10
Vishay Telefunken
N-Channel 40-V (D-S) 175°C MOSFET, Logic Level
SUD30N04-10.pdf4 Pages, 63 KB, Original
SUD30N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175C MOSFET
SUD30N04-10-E3.pdf5 Pages, 67 KB, Original
SUD40N04-10A.pdf4 Pages, 36 KB, Original
SUD40N04-10A
Vishay Telefunken
N-Channel 40-V (D-S) 175°C MOSFET

Product Details Search Results:

Interplex.com/ITM-P0256N04-100E
{"t(acc) Max. (S)":"100n","Package":"SIMM","Output Config":"3-State","Nom. Supp (V)":"5.0","Pins":"22","Military":"N","Bits Per Word":"4","Technology":"NMOS","Number of Words":"256k"}...
752 Bytes - 21:37:59, 01 November 2024
Interplex.com/ITM-S0256N04-100E
{"t(acc) Max. (S)":"100n","Package":"SIMM","Output Config":"3-State","Nom. Supp (V)":"5.0","Pins":"22","Military":"N","Bits Per Word":"4","Technology":"NMOS","Number of Words":"256k"}...
752 Bytes - 21:37:59, 01 November 2024
Interplex.com/ITM-Z1000N04-100E
{"t(acc) Max. (S)":"100n","Package":"ZIP","Output Config":"3-State","Nom. Supp (V)":"5.0","Pins":"N/A","Military":"N","Bits Per Word":"4","Technology":"NMOS","Number of Words":"1M"}...
751 Bytes - 21:37:59, 01 November 2024
Siliconix_vishay/SUD40N04-10A-E3
{"Category":"Power MOSFET","Dimensions":"6.73 x 6.22 x 2.38 mm","Maximum Continuous Drain Current":"40 A","Width":"6.22 mm","Maximum Drain Source Voltage":"40 V","Package Type":"TO-252","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+175 \u00b0C","Typical Gate Charge @ Vgs":"35 nC @ 10 V","Operating Temperature Range":"-55 to +175 \u00b0C","Typical Turn On Delay Time":"14 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"1700 pF @ 25 V","Length":"6.73 mm"...
1958 Bytes - 21:37:59, 01 November 2024
Vishay.com/SQD40N04-10A
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"45 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"168 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Su...
1497 Bytes - 21:37:59, 01 November 2024
Vishay.com/SQD40N04-10A-GE3
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"45 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"168 A","Channel Type":"N-CHANNEL","FET Tec...
1593 Bytes - 21:37:59, 01 November 2024
Vishay.com/SUB70N04-10
{"C(iss) Max. (F)":"2.7n","Absolute Max. Power Diss. (W)":"107","g(fs) Max, (S) Trans. conduct,":"57","I(D) Abs. Max.(A) Drain Curr.":"47","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"14m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"140","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"20","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"30","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"3.0","V(GS)th Min. (V)":"1.0",...
1340 Bytes - 21:37:59, 01 November 2024
Vishay.com/SUD30N04-10-E3
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Rad Hardened":"No","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"40 V","Frequency (Max)":"Not Required MHz","Drain-Source On-Res":"0.01 ohm","Power Dissipation":"97 W","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Output Power (Max)":"Not Required W","Pin Count":"2 +Tab","Continuous Drain Current":"30 A","Power Gain ":"N...
1643 Bytes - 21:37:59, 01 November 2024
Vishay.com/SUD40N04-10A-E3
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"10 mOhm @ 40A, 10V","FET Feature":"Logic Level Gate","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"-","Standard Package":"2,000","Supplier Device Package":"TO-252, (D-Pak)","Other Names":"SUD40N04-10A-E3-ND SUD40N04-10A-E3TR SUD40N0410AE3","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"SUD40N04-10A","Power - Max":"71W","Package / Case":"TO-2...
1711 Bytes - 21:37:59, 01 November 2024
Vishay.com/SUP70N04-10
{"C(iss) Max. (F)":"2.7n","Absolute Max. Power Diss. (W)":"107","g(fs) Max, (S) Trans. conduct,":"57","I(D) Abs. Max.(A) Drain Curr.":"47","@V(GS) (V) (Test Condition)":"4.5","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"14m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"140","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"20","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"30","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"3.0","V(GS)th Min. (V)":"1.0",...
1340 Bytes - 21:37:59, 01 November 2024
Vishay.com/SYD40N04-10A-E3
695 Bytes - 21:37:59, 01 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

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AS4311F-N04-10.pdf0.751Request
AS4311F-N04-10A.pdf7.811Request