Product Datasheet Search Results:
- SQD40N04-10A
- Vishay Presicion Group
- 42 A, 40 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
- SQD40N04-10A-GE3
- Vishay [siliconix]
- MOSFET N-CH D-S 40V 42A TO252 - SQD40N04-10A-GE3
Product Details Search Results:
Vishay.com/SQD40N04-10A
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"45 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"168 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Su...
1497 Bytes - 23:27:19, 01 November 2024
Vishay.com/SQD40N04-10A-GE3
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"45 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"168 A","Channel Type":"N-CHANNEL","FET Tec...
1593 Bytes - 23:27:19, 01 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
AS4311F-N04-10A.pdf | 7.81 | 1 | Request |