Product Datasheet Search Results:
10 Pages, 660 KB, Original- BSC079N10NSG
- Infineon Technologies Ag
- 13.4 A, 100 V, 0.0079 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 660 KB, Original- BSC079N10NSGATMA1
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 13.4A Automotive 8-Pin TDSON EP T/R
10 Pages, 660 KB, Original- BSC079N10NSGXT
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON T/R
Product Details Search Results:
Infineon.com/BSC079N10NSG
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"377 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0079 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","China RoH...
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Infineon.com/BSC079N10NSGATMA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"40 ns","Typical Turn-Off Delay Time":"38 ns","Description":"Value","Maximum Continuous Drain Current":"13.4 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"24 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"7.9@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"11 ns"}...
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Infineon.com/BSC079N10NSGXT
1100 Bytes - 17:35:17, 11 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSC079N10NSG.pdf | 0.64 | 1 | Request |
