Product Datasheet Search Results:
9 Pages, 195 KB, Original- BSM100GB120DN2K
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10 Pages, 195 KB, Original- BSM100GB120DN2K
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10 Pages, 195 KB, Original- BSM100GB120DN2KHOSA1
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9 Pages, 114 KB, Original- BSM100GB120DN2K
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Product Details Search Results:
Infineon.com/BSM100GB120DN2K
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"145 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"700 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge1","Configuration":"Half Bridge","M...
1635 Bytes - 23:24:59, 01 November 2024
Infineon.com/BSM100GB120DN2KHOSA1
{"Collector Current (DC) ":"145(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"34MM-1","Configuration":"Dual","Pin Count":"7"}...
1493 Bytes - 23:24:59, 01 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM100GB120DN2K.pdf | 0.21 | 1 | Request |
