Product Datasheet Search Results:

IRF822.pdf5 Pages, 158 KB, Scan
IRF822
Fairchild Semiconductor
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF822.pdf4 Pages, 200 KB, Original
IRF822.pdf4 Pages, 200 KB, Original
IRF822
Frederick Components
Power MOSFET Selection Guide
IRF822.pdf1 Pages, 35 KB, Scan
IRF822
Motorola
European Master Selection Guide 1986
IRF822.pdf5 Pages, 165 KB, Scan
IRF822
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.
IRF822.pdf2 Pages, 125 KB, Scan
IRF822
General Electric
Power Transistor Data Book 1985
IRF822.pdf5 Pages, 176 KB, Scan
IRF822
Harris Semiconductor
Power MOSFET Data Book 1990
IRF822R.pdf5 Pages, 190 KB, Scan
IRF822R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF822.pdf1 Pages, 98 KB, Scan
IRF822
International Rectifier
TO-220 Plastic Package HEXFETs
IRF822R.pdf1 Pages, 48 KB, Original
IRF822R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF822.pdf4 Pages, 225 KB, Scan
IRF822
N/a
FET Data Book
IRF822FI.pdf1 Pages, 84 KB, Scan
IRF822FI
N/a
Shortform Datasheet & Cross References Data

Product Details Search Results:

St.com/IRF822FI
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"225 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Tech...
1531 Bytes - 11:41:44, 27 December 2024
Various/IRF822R
{"C(iss) Max. (F)":"360p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.3","I(D) Abs. Max.(A) Drain Curr.":"1.4","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"42n","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"7.0","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1296 Bytes - 11:41:44, 27 December 2024

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